GaN Power Devices Market is expected to increase during the forecast period owing to the factors such as decreasing prices of GaN devices, growing use of wireless charging, and increasing sustainability of GaN in RF applications. GaN (Gallium Nitride) is a composite semiconductor material used in next-generation power devices. It is anticipated to see wide adoption due to its enhanced properties over silicon devices, such as tremendous high-frequency characteristics. Moreover, due to its higher switching properties and lower ON resistance than silicon devices, GaN devices are projected to contribute to lower power consumption and greater miniaturization of various power supplies and the miniaturization of peripheral components. Major market players in the Global GaN Power Devices Market are Efficient Power Conversion Corporation, NXP Semiconductors, GaN Systems, Wolfspeed, Inc., Infineon Technologies AG, EPISTAR Corporation, Rohm Co., Ltd., On Semiconductor Corporation, Qorvo, Inc, and MACOM Technology Solutions Holdings Inc. Download Free Sample Report: https://www.techsciresearch.com/sample-report.aspx?cid=1893 (Use your Corporate E-mail Id for Faster Response) For More Information Visit: https://www.techsciresearch.com/report/global-gan-power-devices-market/1893.html